DDR3

工業嵌入式記憶體

Features

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply
Memory Organization: x8 FBGA DRAM chip
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Serial presence detect with EEPROM.
On Die Termination with ODT pin
RoHS Compliant

DDR3 DIMM 模組符合 JEDEC 標準。該模組採用原裝 DRAM 芯片製造，並經過 100% 嚴格測試，具有更高的性能、更高的穩定性和更高的兼容性。

Model	UB-DIMM / SO-DIMM / ECC DIMM / R-DIMM
Interface	240pin / 204pin
NAND Flash Type	DDR3 1333 / 1600 / 1866 MT/s
Capacity	4GB / 8GB
Sustained Read Performance(MB/sec)	Support ECC function
Sustained Write Performance(MB/sec)	9-9-9 / 11-11-11 / 13-13-13
Standard Operating Temperature (°C)	0°C~+85°C / -40°C~+85°C
Operating Voltage	1.5V / 1.35V